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PD - 9.1613A
PRELIMINARY
IRF7413A
HEXFET ? Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
S
1
8
A
A
D
l N-Channel Mosfet
S
2
7
D
V DSS = 30V
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S
G
3
4
T op V iew
6
5
D
D
R DS(on) = 0.0135 ?
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
S O -8
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
12
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
8.4
58
2.5
0.02
± 20
260
5.0
-55 to + 150
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
–––
50
°C/W
8/25/97
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